| PART |
Description |
Maker |
| SFG16UD600 SFG16UD100 SFG16UD400 SFG16UD200 |
Voltage 200V ~600V 16.0 Amp Super Fast Rectifier
Voltage 200V ~ 600V16.0 Amp Super Fast Rectifier
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| Z0305MG Z0305BG |
TRIAC|200V V(DRM)|3A I(T)RMS|TO-39
3.0 Amp 200-600V Triacs
|
TAG Semiconductors
|
| AM21L41-15DCB AM21L41-15PCB AM21L41-20DCB AM21L41- |
250µA, 3MHz, 200V/µsOperational Amplifier; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
x1 SRAM
Dual and Quad 250uA, 3MHz, 200V/us Operational Amplifier; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C
12MHz, 400V/us Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
25MHz, 600V/us Op Amp; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
High Power Synchronous DC/DC Controller; Package: SO; No of Pins: 20; Temperature Range: -40°C to 85°C x1的SRAM
|
RECOM Electronic GmbH
|
| S2GVB80-C S2GVB40-C S2GVB60-C |
Voltage 200V ~800V 2 Amp Glass Passivited Bridge Rectifers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| BT152-600 BT152 |
600V Vdrm 20A Sensitive Gate Silicon Controlled Rectifier, 1.7@40AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SEMIWELL[SemiWell Semiconductor]
|
| SCDH103 SCDH104 SCDH105 SCDH106 SCDH107 SCDH103-15 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated High Efficient Rectifier
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| IRFS640 IRFS640B IRF640B IRF640 IRF640BTSTUFP001 I |
200V N-Channel B-FET / Substitute of IRF640 & IRF640A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| A29040AV-90 A29040A-70 A29040A-90 A29040AV-55 A290 |
AUTOMATIC 600A CLAMPMETER WITH AUTOTECT RoHS Compliant: NA
512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Test RoHS Compliant: NA
Fuse; Current Rating:1A; Voltage Rating:600V; Voltage Rating:600V; Voltage, AC:600V RoHS Compliant: NA 512k × 8位CMOS 5.0伏只，统一部门快闪记忆
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| ES1GF ES1DF |
1A, 200V - 600V Surface Mount Super Fast Rectifiers
|
Taiwan Semiconductor Co...
|
| ES1DFL |
1A, 200V - 600V Surface Mount Super Fast Rectifiers
|
Taiwan Semiconductor Co...
|
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
